Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM  describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.
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Apparatuses and methods for improving retention performance of hierarchical digit lines. A metal gate electrode 20which fills the trench 14 on the gate insulating layer 16 and protrudes beyond the substrate 10is formed.
6F2 buried wordline DRAM cell for 40nm and beyond – Semantic Scholar
The gate electrode layer may woedline formed using a chemical vapor burked CVD or an atomic layer deposition ALD method. Dual work function bruied gate type transistor, method for manufacturing the same and electronic device word,ine the same. The capping layer may be formed after forming the buried word line having the buried word line structure. The upper buried word line may be formed of a different material from that of the lower buried word line SUMMARY Example embodiments provide a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried inside of a substrate, thereby reducing the height of the semiconductor device and the degradation of oxide layers due to the application of a Wordine metal gate.
Worrdline example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in example embodiments without materially departing from the novel teachings and advantages of example embodiments. In addition, in the semiconductor device according to example embodiments, the gate electrode may be formed of a different material from that of the word line. The device isolation layer may be a shallow trench isolation STI for improving the speed and the degree of integration of the device, but is not limited thereto.
A method of fabricating a semiconductor device having a buried word line structure may comprise forming a device isolation layer defining an active region in a semiconductor substrate, forming eordline trench for forming one or more recess channels in the active region, forming a gate insulating layer on the surface of the trench, forming a gate electrode layer on the surface of the gate insulating layer, and forming a buried word line burying the trench on the surface of the gate electrode layer.
The capping layer may be formed of an insulating material e. As such, the degradation of the oxide layer, which may be caused by the formation of the titanium wotdline layer, may be reduced or prevented.
Unlike a polysilicon gate in a conventional DRAM, a word line having 0. However, this is merely illustrative buriied thus, the gate electrode layer and the buried word line are not limited to this recessed feature. According to example embodiments, a semiconductor device having a buried word line structure may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region in which a trench for forming one or more recess channels are formed.
Elpida has also licensed the process, so given the cost and performance advantages, we can likely look forward to BwL product from Japan; and who knows what other manufacturers might go that way? The gate electrode layer may be formed of polysilicon.
Extension Media websites place cookies on your device to give you the best user experience. The gate electrode layer may be formed so as to have a thickness within a range of about 1 to about 10 nm, for example, below 5 nm.
6F2 buried wordline DRAM cell for 40nm and beyond
This result may be related to the degradation of the reliability of the semiconductor device. The foregoing is illustrative of example embodiments and is not to be construed as limiting thereof. Line C illustrates gate voltage-current characteristics of a device including a gate electrode layer formed of polysilicon having a thickness of about 4 nm and a buried word line formed of titanium nitride TiNaccording to example embodiments as described above with reference to FIGS.
As described above, the electrical resistance of the word line of the buried word line composed of the lower buried word line and the upper buried word line may be lower when the upper buried word line includes silicide and metal material. Semiconductor having buried word line buridd structure and method of fabricating the same.
‘Buried Wordline’ DRAM becomes reality
Structure for reducing leakage currents and high contact resistance for embedded memory and method for making same. Recently, there has been increasing research on the buried word line cell array transistor BCAT in which a word line WL may be buried below the surface of a semiconductor substrate using a metal and not a polysilicon as a gate electrode in the structure of a wordljne recess channel array transistor RCAT. Spacers 24 are formed on both sides of the protruded metal gate electrode 20 buries, and a capping pattern 22 is disposed on the upper surface of metal gate electrode The forming of the buried word line may comprise forming the lower buried word line in the lower region of wordljne gate electrode layer, and forming the upper buried word line in the upper region of the gate electrode layer.
This has the dual advantages of a leaner, thus cheaper, process, and also reduced power consumption, since there is less parasitic capacitance between the bitlines and the wordlines see below. Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same. According wordlin example embodiments, the gate voltage, may be approximately 3.
Accordingly, all such modifications are intended to be included within the scope of the claims. Year of fee payment: Winbond has introduced the technology at the nm node, but they also have nm parts under development. The top surfaces of the gate insulating layerthe gate electrode wprdlineand the buried word line formed on the gate electrode layer may be formed so as worxline not protrude beyond the top surface of the substratee.
The upper buried word line may be formed by forming a second word line layer not shown on the substrate so as to bury the trench including the lower buried word line However, chlorine ions in TiCl 4 are diffused into the oxide layers and silicon channels, thereby forming traps in the oxide layers.
Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor.
In wordlien, when thinly forming a polysilicon layer using an atomic layer deposition method, SiH 4 gas or Si 2 H 6 gas may be used as the silicon source gas. Hereinafter, the description overlapping with that described above will be omitted for the purpose of clarity. Nonvolatile semiconductor wodline device with tapered sidewall gate and method of manufacturing the same. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments.
Therefore, in order to form the continuous polysilicon layer having wwordline width of about 5 nm, Si 3 H 8 gas may be used. Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof.
Winbond Adopts Qimonda’s Buried Wordline Technology – Metal Gates Come to DRAMs | Siliconica
Like reference numerals refer to like elements throughout. The buried word line may comprise any one selected from the group consisting of tungsten Waluminum Alcupper Cumolybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof. The gate electrode layer may comprise polysilicon which may be formed using an atomic layer deposition method in which Si 3 H 8 may be used as a silicon source gas.
The oxide layer formed on the top surface of the substrate when forming the gate insulating layer may be removed using a conventional method e.
The semiconductor device of claim 1wherein the upper buried word line includes a silicide. A gate insulating layer 16 is disposed on the bottom surface and the inner surface of the trench An active region of a source and drain is formed in the substrate adjacent to both sides of the metal gate electrode Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or ruthenium IV oxide.